| Part Number | MMBF2202PT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBF2202PT1/D
MMBF2202PT1
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine™ Port.
urce Voltage Gate *to *Source Voltage * Continuous Drain Current * Continuous @ TA = 25°C Drain Current * Continuous @ TA = 70°C Drain Current * Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Thermal Resistance * Junct. |
MMBF2202PT1 Datasheet and Specifications PDF
The MMBF2202PT1 is a P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET.
Key Specifications
| Package | SC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MMBF2202PT1 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | onsemi |
| Overview |
MMBF2202PT1
Preferred Device
Power MOSFET 300 mAmps, 20 Volts
P−Channel SC−70/SOT−323
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these dev.
ing Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD 150 1.2 TJ, Tstg RθJA TL * 55 to 150 833 260 mW mW/°C °C °C/W °C 1 2 P3 W = Device Code = Work Week 3 SC *70/SOT *323 CASE 419 STYLE 8 P3W Value 20 ± 20 300 240 750 Unit Vdc Vdc mAdc 2 1 300 mAMPS 20 VOLTS RDS(on) = 2.2 W P *. |