MMBR920L Datasheet and Specifications PDF

The MMBR920L is a NPN SIlicon High Frequency Transistor.

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Part NumberMMBR920L Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part NumberMMBR920L Datasheet
DescriptionSilicon NPN RF Transistor
ManufacturerInchange Semiconductor
Overview ·Low Noise NF= 2.4dB TYP. @ f= 500MHz ·High Gain Gpe= 15dB TYP. @ f= 500MHz APPLICATIONS ·Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain s. BO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC= 0.1mA ; IE= 0 IE= 0.1mA ; IC= 0 20 2 V V ICBO Collector Cutoff Current VCB= 10V; IE= 0 50 nA hFE DC Current Gain COB Output Capacitance IC= 14mA ; VCE= 10V IE= 0 ; VCB= 10V; f= 1MHz 25 250 1.0 pF fT Current-Ga.