| Part Number | MMBT1010LT1 Datasheet |
|---|---|
| Manufacturer | E-Tech |
| Overview |
Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve e.
ol P D (1) Max 250 1.8 R θJA TJ T
stg
1 2
Unit mW mW/°C °C/W °C °C
CASE 318D *04, STYLE 1 SC * 59 556 150 *55 *+150 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volt. |
MMBT1010LT1 Datasheet and Specifications PDF
The MMBT1010LT1 is a Low Saturation Voltage.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | MMBT1010LT1 Datasheet |
|---|---|
| Description | Low Saturation Voltage |
| Manufacturer | Leshan Radio Company |
| Overview | . . |
| Part Number | MMBT1010LT1 Datasheet |
|---|---|
| Description | PNP Silicon Driver Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBT1010LT1/D
Low Saturation Voltage PNP Silicon Driver Transistors
Part of the GreenLine™ Portfolio of devices with energy–conserving.
= GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 * 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D *03, STYLE 1 SC-59 ELECTRICAL CHAR. |