MMBT5550LT1 Datasheet and Specifications PDF

The MMBT5550LT1 is a High Voltage Transistors.

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Part NumberMMBT5550LT1 Datasheet
ManufacturerETL
Overview High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — C. mAdc, I B = 0) MMBT5550 140 MMBT5551 160 Collector
*Base Breakdown Voltage V (BR)CBO (I C = 100 µAdc, I E = 0) MMBT5550 160 MMBT5551 180 Emitter
*Base Breakdown Voltage (I E = 10 µAdc, I C = 0) V (BR)EBO 6.0 Collector Cutoff Current I CBO ( V CB = 100Vdc, I E = 0) MMBT5550
* ( V CB .
Part NumberMMBT5550LT1 Datasheet
DescriptionHigh Voltage Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RAT. Unit OFF CHARACTERISTICS Collector
* Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector
* Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
* Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE =.