| Part Number | MMBT6427LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT6427LT1/D
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 1
MMBT6427LT1
Motorola Preferred Device
EMITTER 2
3 1 2
MAXIMUM RAT.
mitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector * Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter * Base Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC. |
MMBT6427LT1 Datasheet and Specifications PDF
The MMBT6427LT1 is a Darlington Transistor.
| Part Number | MMBT6427LT1 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | onsemi |
| Overview |
MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage .
* Pb *Free Package is Available MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc COLLECTOR 3 BASE 1 EMITTER 2 THERMAL CHARACTERISTICS . |