| Part Number | MMBTA14LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA13LT1/D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3 BASE 1
MMBTA13LT1 MMBTA14LT1*
*Motorola Preferred Device
EMITTER.
t
OFF CHARACTERISTICS
Collector * Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR * 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES ICBO IEBO 30 * * * 100 100 Vdc nAdc nAdc 0.062 in. 0.024 in.. |
MMBTA14LT1 Datasheet and Specifications PDF
The MMBTA14LT1 is a Darlington Amplifier Transistors.
| Part Number | MMBTA14LT1 Datasheet |
|---|---|
| Description | Darlington Amplifier Transistors(NPN Silicon) |
| Manufacturer | onsemi |
| Overview |
MMBTA13LT1, MMBTA14LT1
MMBTA14LT1 is a Preferred Device
Darlington Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
.
* Pb *Free Packages are Available MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 *55 to +150 mW mW. |