MMDT5551 Datasheet and Specifications PDF

The MMDT5551 is a 160V DUAL NPN HIGH-VOLTAGE TRANSISTOR.

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Part NumberMMDT5551 Datasheet
ManufacturerDiodes Incorporated
Overview MMDT5551 160V DUAL NPN HIGH-VOLTAGE TRANSISTOR IN SOT363 Features • Epitaxial Planar Die Construction • Complementary PNP Type – MMDT5401 • Ideal for Medium Power Amplification and Switching • Ultra-.
* Epitaxial Planar Die Construction
* Complementary PNP Type
* MMDT5401
* Ideal for Medium Power Amplification and Switching
* Ultra-Small Surface-Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive applications.
Part NumberMMDT5551 Datasheet
DescriptionNPN/NPN Multi-Chip Transistor
ManufacturerLITEON
Overview NPN/NPN Multi-Chip Transistor MMDT5551 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available(MMDT5401) MECHANICAL DATA • Case: SOT-363 Plastic • Case mater.
* Ideal for Medium Power Amplification and Switching
* Complementary PNP Type Available(MMDT5401) MECHANICAL DATA
* Case: SOT-363 Plastic
* Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
* Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = .
Part NumberMMDT5551 Datasheet
DescriptionDual NPN Small Signal Surface Mount Transistor
ManufacturerGalaxy Microelectronics
Overview Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES  Epitaxial planar die construction.  Complementary PNP type available MMDT5401.  Ultra-small surface mount package.
* Epitaxial planar die construction.
* Complementary PNP type available MMDT5401.
* Ultra-small surface mount package. Pb Lead-free MMDT5551 APPLICATIONS
* Dual NPN small signal surface mount transistor. ORDERING INFORMATION Type No. Marking MMDT5551 K4N SOT-363 Package Code SOT-363 MAXIMU.
Part NumberMMDT5551 Datasheet
DescriptionHIGH VOLTAGE SWITCHING TRANSISTOR
ManufacturerUnisonic Technologies
Overview The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.  FEATURES * High Collector-Emitter . * High Collector-Emitter Voltage: VCEO=160V * High current gain
* EQUIVALENT CIRCUIT
* ORDERING INFORMATION Ordering Number MMDT5551G-AL6-R Package SOT-363 Pin Assignment 123456 E1 B1 C2 E2 B2 C1 Packing Tape Reel
* MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1.