| Part Number | MMFT2406T1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMFT2406T1
Power MOSFET
700 mA, 240 V, N−Channel, SOT−223
This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and re.
l Resistance * Junction *to *Ambient (surface mounted) (Note 1) Symbol Value RqJA 83.3 Unit °C/W Lead Temperature for Soldering Purposes, 1/16″ from case Time in Solder Bath TL 260 °C 10 Sec Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. F. |
MMFT2406T1 Datasheet and Specifications PDF
The MMFT2406T1 is a Power MOSFET.
Key Specifications
| Package | TO-261-4 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Part Number | MMFT2406T1 Datasheet |
|---|---|
| Description | MEDIUM POWER MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT2406T1/D
Medium Power Field Effect Transistor
N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount
This TMO.
8E *04, STYLE 3 TO *261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain *to *Source Voltage Gate *to *Source Voltage * Continuous Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 240 ± 20 7. |