| Part Number | MMPQ3467 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous Power Dissipation @ . . |
MMPQ3467 Datasheet and Specifications PDF
The MMPQ3467 is a Quad Memory Driver Transistor.
Key Specifications
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 16 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MMPQ3467 Datasheet |
|---|---|
| Description | Quad Memory Driver Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMPQ3467/D
Quad Memory Driver Transistor
PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ3467
Motorola Preferred Device
16
MAX.
C = 0) Collector Cutoff Current (VCB = *30 Vdc, IE = 0) Emitter Cutoff Current (VEB = *3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO *40 *40 *5.0 * * * * * * * * * * *200 *200 Vdc Vdc Vdc nAdc nAdc v 300 ms; Duty Cycle v 2.0%. Thermal Clad is a trademark of the B. |
| Part Number | MMPQ3467 Datasheet |
|---|---|
| Description | PNP Switching Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | TN3467A / MMPQ3467 Discrete POWER & Signal Technologies TN3467A MMPQ3467 E B E B E B E B C TO-226 B E SOIC-16 C C C C C C C C PNP Switching Transistor This device is designed for high. d Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3467A 1.0 8.0 50 125 Max MMPQ3467 1.0 8.0 Units W mW/ °C °C/W °C/W °C/W °C/W 125 240 © 1997 Fairchild Semiconductor Corporation TN. |