MOC8101 Datasheet and Specifications PDF

The MOC8101 is a (MOC8101 - MOC8108) Phototransistor Optocouplers.

Datasheet4U Logo
Part NumberMOC8101 Datasheet
ManufacturerFairchild Semiconductor
Overview The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. White Package (-M Suffix) Black Package (N.
* UL recognized (File # E90700)
* VDE recognized
* Add option V for white package (e.g., CNY17F2VM)
* File #102497
* Add option ‘300’ for black package (e.g., CNY17F2300)
* File #94766
* Current transfer ratio in select groups
* High BVCEO
*70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)
* Closely mat.
Part NumberMOC8101 Datasheet
Description6-Pin DIP Optoisolators
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8101/D MOC8101 GlobalOptoisolator™ [CTR = 50–80%] 6-Pin DIP Optoisolators for Power Supply Applications (No Base Connection) The MOC. se noted) Rating INPUT LED Forward Current
* Continuous Forward Current
* Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT TRANSISTOR Collector
*Emitter Voltage Emitter
*Collector Voltage Collector Current
* Continuous Detector Power Dissipation @ .
Part NumberMOC8101 Datasheet
DescriptionOptocoupler
ManufacturerVishay
Overview The MOC8101, MOC8102, MOC8103, MOC8104 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in D.
* Isolation test voltage, 5300 VRMS
* No base terminal connection for improved common mode interface immunity
* Long term stability
* Industry standard dual in line package
* Material categorization: for definitions of compliance please see AGENCY APPROVALS
* UL
* cUL
* DIN .
Part NumberMOC8101 Datasheet
DescriptionPHOTOTRANSISTOR
ManufacturerISOCOM COMPONENTS
Overview The MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plasti. Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise spec.