MOC8102 Datasheet and Specifications PDF

The MOC8102 is a Optocoupler.

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Part NumberMOC8102 Datasheet
ManufacturerVishay
Overview The MOC8101, MOC8102, MOC8103, MOC8104 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in D.
* Isolation test voltage, 5300 VRMS
* No base terminal connection for improved common mode interface immunity
* Long term stability
* Industry standard dual in line package
* Material categorization: for definitions of compliance please see AGENCY APPROVALS
* UL
* cUL
* DIN .
Part NumberMOC8102 Datasheet
Description6-Pin DIP Optoisolators
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8101/D MOC8101 GlobalOptoisolator™ [CTR = 50–80%] 6-Pin DIP Optoisolators for Power Supply Applications (No Base Connection) The MOC. se noted) Rating INPUT LED Forward Current
* Continuous Forward Current
* Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT TRANSISTOR Collector
*Emitter Voltage Emitter
*Collector Voltage Collector Current
* Continuous Detector Power Dissipation @ .
Part NumberMOC8102 Datasheet
Description(MOC8101 - MOC8108) Phototransistor Optocouplers
ManufacturerFairchild Semiconductor
Overview The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. White Package (-M Suffix) Black Package (N.
* UL recognized (File # E90700)
* VDE recognized
* Add option V for white package (e.g., CNY17F2VM)
* File #102497
* Add option ‘300’ for black package (e.g., CNY17F2300)
* File #94766
* Current transfer ratio in select groups
* High BVCEO
*70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)
* Closely mat.
Part NumberMOC8102 Datasheet
DescriptionPHOTOTRANSISTOR
ManufacturerISOCOM COMPONENTS
Overview The MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plasti. Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise spec.