MPSA75 Datasheet and Specifications PDF

MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage MPSA75 MPSA77 Symbol VCES Value --40 --60 Unit Vdc Emi.

* These are Pb
*Free Devices* MAXIMUM RATINGS Rating Collector
*Emitter Voltage MPSA75 MPSA77 Symbol VCES Value
*40
*60 Unit Vdc Emitter
*Base Voltage Collector Current
* Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD
*10
*500 625 5.0 Vdc mAdc mW mW/°C O.

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The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING:.

0
*- 500
*- 100 40 40 - 1.5 - 2.0 10K 10K 125 - MPSA76 MIN MAX
* 100
*- 500
* 100 50 50 - 1.5 - 2.0 10K 10K 125 - MPSA77 MIN MAX
*- 100
*- 500 - 100 60 60 - 1.5 - 2.0 10K 10K 125 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA nA nA V V V V MHz R1 (18-March 2014) MPSA75 MPSA76 MPSA77 SI.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Vol.

*30 V, VBE = 0) (VCE =
*50 V, VBE = 0) Emitter Cutoff Current (VEB =
*10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO
*
*
*
*
*
*
*500
*500
*100 nAdc V(BR)CES V(BR)CBO ICBO
*
*
*
*
*100
*100 nAdc
*40
*60
*40
*60
*
*
*
*
*
*
*
* Vdc Vdc nAdc ON CHARACTERISTICS DC Current G.