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MTB23P06V Datasheet

The MTB23P06V is a TMOS POWER FET. Download the datasheet PDF and view key features and specifications below.

Part NumberMTB23P06V
ManufacturerMotorola Semiconductor
Overview MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–r. of TMOS V
* On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
  –FET Predecessors ™ Data Sheet V™ MTB23P06V Motorola Preferred Device P
  –Channel Enhancement
  –Mode Silicon Gate TMOS POWER FET 23 AMPERES 60 VOLTS RD.
Part NumberMTB23P06V
DescriptionPower MOSFET
Manufactureronsemi
Overview MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high . VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 15 ± 25 23 15 81 90 0.60 3.0 Vdc Vpk Adc Apk Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 Ω) E.

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