MTB36N06V Datasheet and Specifications PDF

MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high .

VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 20 ± 25 32 22.6 112 90 0.6 3.0 Vdc Vpk Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg
* 55 to 175 °C Single Pulse Drain
*to
*Source Avalanche Energy
* Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 0.1 mH, RG =.

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–r.

of TMOS V
* On
*resistance Area Product about One
*half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
*FET Predecessors Features Common to TMOS V and TMOS E
*FETs
* Avalanche Energy Specified
* IDSS and VDS(on) Specified at Elevated Temperature
* Static .