MTD6P10E Datasheet and Specifications PDF

MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also .

* Avalanche Energy Specified
* Source
*to
*Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Pb
*Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device.

vailable in 16 mm, 13
*inch/2500 Unit Tape & Reel, Add
*T4 Suffix to Part Number D TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM ® CASE 369A
*13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MΩ) Gate
*.