MTP23P06V Datasheet and Specifications PDF

MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, hig.

ergy
* Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance
* Junction to Case Thermal Resistance
* Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tst.

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product a.

of TMOS V
* On
*resistance Area Product about One
*half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
*FET Predecessors Features Common to TMOS V and TMOS E
*FETS
* Avalanche Energy Specified
* IDSS and VDS(on) Specified at Elevated Temperature
* Static .