MUR20010CT Datasheet and Specifications PDF

The MUR20010CT is a Silicon Super Fast Recovery Diode.

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Part NumberMUR20010CT Datasheet
ManufacturerGeneSiC
Overview Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Packag.
* High Surge Capability
* Types from 50 V to 200 V VRRM
* Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) .
Part NumberMUR20010CT Datasheet
Description200 Amp Supre Fast Recovery Rectifier
ManufacturerMicro Commercial Components
Overview MCC Features • • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20005CT THRU MUR20060CT 200 Amp Supre Fast Recovery Recti.
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*   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20005CT THRU MUR20060CT 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts FULL PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Fo.
Part NumberMUR20010CT Datasheet
DescriptionSilicon Super Fast Recovery Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet Free Datasheet . .
Part NumberMUR20010CT Datasheet
DescriptionSuper Fast Recovery Diode
ManufacturerNaina Semiconductor
Overview Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capabi. Super Fast Recovery Diode, 200A
* Dual Diode Construction
* Low Leakage Current
* Low forward voltage drop
* High surge current capability
* Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR20005CT(R) Repetitive peak.