| Part Number | MV2101 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high volume requirements .
* * * * * 6.8 *100 pF, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode SOT *23 2 Cathode 1 Anode 1 Anode High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance * 10% Complete Typical Design Curves Pb *Free Packages are Available MAXIMUM RATINGS Rating Rev. |
MV2101 Datasheet and Specifications PDF
The MV2101 is a (MV2101 - MV2209) Silicon Tuning Diodes.
| Part Number | MV2101 Datasheet |
|---|---|
| Description | Silicon Tuning Diode |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency. . |
| Part Number | MV2101 Datasheet |
|---|---|
| Description | Silicon Tuning Diode |
| Manufacturer | LRC |
| Overview |
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general f.
+150 °C *55 to +150 °C DEVICE MARKING MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J Symbol V (BR)R IR TCC Min 30 * * Typ * * 280 Max * 0.1 * Unit Vdc µ Adc ppm/°C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdo. |