NCE4614 Datasheet and Specifications PDF

The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other a.

N-channel P-channel
* N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V Only Schematic diagram
* P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V Use RDS(ON) < 45mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* Surfa.

NCE4614 N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A)a 0.018 at VGS = 10 V 8e 0.020 at VGS = 8 V 8e 0.024 at VGS = .

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Motor Drive
* Mobile Power Bank S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C,.