The NDS331N is a N-Channel MOSFET.
| Package | SOT-23-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.22 mm |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NDS331N Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
NDS331N-NL
NDS331N-NL N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
ID (A)e 6a 6a 5.6
Qg (.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converters * Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So. |
| Part Number | NDS331N Datasheet |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially. 1.3 A, 20 V. RDS(ON) = 0.21 Ω @ VGS= 2.7 V RDS(ON) = 0.16 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma. |
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