NJW21194G Datasheet and Specifications PDF

The NJW21194G is a Silicon Power Transistors.

Key Specifications

PackageTO-218-3
Pins3
Max Frequency1 MHz
Height20.1 mm
Length15.8 mm
Width5 mm
Max Operating Temp150 °C
Min Operating Temp-65 °C
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Part NumberNJW21194G Datasheet
Manufactureronsemi
Overview NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positi.
* Total Harmonic Distortion Characterized
* High DC Current Gain
* Excellent Gain Linearity
* High SOA
* These Devices are Pb
*Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector
*Emitter Voltage
* 1.
Part NumberNJW21194G Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use i. CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Volt.

Price & Availability

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