The NP36P04KDG is a P-Channel Power MOSFET.
| Package | TO-263 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.65 mm |
| Length | 10 mm |
| Width | 9 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP36P04KDG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. * Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = *10 V, ID = *18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = *4.5 V, ID = *18 A) * Low input capacitance Ciss = 2800 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain. |
| Part Number | NP36P04KDG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 17.0 m Max. ( VGS = -10 V, ID = -18 A ) RD.
* Super low on-state resistance : RDS(on) = 17.0 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 23.5 m Max. ( VGS = -4.5 V, ID = -18 A ) * Low input capacitance : Ciss = 2800 pF Typ. * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product does not contain Pb in the exte. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Renesas | 1600 | 1+ : 3.09 USD 10+ : 2.004 USD 100+ : 1.3874 USD 800+ : 1.06471 USD |
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| DigiKey | 1600 | 1+ : 3.09 USD 10+ : 2.004 USD 100+ : 1.3874 USD |
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| DigiKey | 1600 | 1+ : 3.09 USD 10+ : 2.004 USD 100+ : 1.3874 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| NP36P04SDG | Renesas | P-channel Power MOSFET |