| Part Number | NTE68 |
|---|---|
| Manufacturer | NTE Electronics |
| Overview |
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
Features: D Hig.
D High Safe Operating Area: 2A @ 80V D High DC Current Gain: hFE = 15 Min @ IC = 8A
Absolute Maximum Ratings: Collector *Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector *Emitter Voltage, VCEX . . . . . . . . |
NTE68 Datasheet
The NTE68 is a Silicon Complementary Transistors.
| Part Number | NTE68 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -800mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A VBE(on) Base-Emitter On Voltage IC= -8A; VCE=-4V VCBO Collector-Base Breakdown Voltage IC= -1mA; IB= 0 VCEO Collec. |