| Part Number | NVD5117PL Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MOSFET – Power, Single, P-Channel
-60 V, -61 A, 16 mW
NVD5117PL
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • Thes.
* Low RDS(on) to Minimize Conduction Losses * High Current Capability * Avalanche Energy Specified * AEC *Q101 Qualified * These Devices are Pb *Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain *to *Source V. |
NVD5117PL Datasheet and Specifications PDF
The NVD5117PL is a P-Channel Power MOSFET.
| Part Number | NVD5117PL Datasheet |
|---|---|
| Description | P-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage-Continuo.
*Drain Current : ID= -61A@ TC=25℃ *Drain Source Voltage : VDSS= -60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power switch and s. |