| Part Number | NX2301P Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8.
and benefits
* * * * 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications * * * * Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick ref. |
NX2301P Datasheet and Specifications PDF
The NX2301P is a 2A P-Channel Trench MOSFET.
Key Specifications
| Height | 1.1 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | NX2301P Datasheet |
|---|---|
| Description | P-channel MOSFET |
| Manufacturer | Nexperia |
| Overview |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDS.
and benefits
* 1.8 V RDSon rated for Low Voltage Gate Drive * Very fast switching * Trench MOSFET technology * AEC-Q101 qualified 1.3 Applications * Relay driver * High-speed line driver * High-side loadswitch * Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Par. |