P0260ETF Datasheet
P0260ETF Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode P0260ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω ID 2A D G S ABSOLUTE MA.
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P0260ETF Datasheet (UNIKC)
UNIKC
P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.3Ω @VGS = 10V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO.
ARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 2 3 4 ±100 Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V ,.