P0470ETF Datasheet
P0470ETF Datasheet (UNIKC)
UNIKC
P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 2.8Ω @VGS = 10V 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted.
STICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 700 2 3 4 ±100 Gate Voltag.
P0470ETF Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode P0470ETF:TO-220F P0470ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 2.8Ω ID 4A D G S ABSOLUTE MAX.
.