P0510AT Datasheet and Specifications PDF

P0510AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 5.5mΩ @VGS = 10V ID 132A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO.

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NIKO-SEM N-Channel Enhancement Mode P0510AT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 5.5mΩ ID 143A D G S ABSOLUTE MAXIMUM RATINGS (TA.

Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±25V VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125 °C LIMITS MIN TYP MAX UNITS 100 V 234 ±1.