P0860ETFS Datasheet and Specifications PDF

P0860ETF / P0860ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.05Ω @VGS = 10V 8A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Note.

STICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 2 2.7 4 ±100 Gate Voltage .

NIKO-SEM N-Channel Enhancement Mode P0860ETF:TO-220F P0860ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.05Ω 8A D G S ABSOLUTE M.

ISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V REV 1.0 1 LIMITS MIN TYP MAX UNIT 600 V 2 2.7 4 .