P1070ETF Datasheet
P1070ETF Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode P1070ETF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 0.91Ω ID 10A D G S ABSOLUTE MAXIMUM RATINGS (T.
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P1070ETF Datasheet (UNIKC)
UNIKC
P1070ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 0.91mΩ @VGS = 10V 10A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted).
ETF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS.