P1160ZT Datasheet
P1160ZT Datasheet (UNIKC)
UNIKC
P1160ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 390mΩ @VGS = 10V 11A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO.
e Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 V 2 3.4 4 ±100 nA Gate Voltage Drain Current Drain-Sou.
P1160ZT Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel High Voltage Mode P1160ZT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 390mΩ ID 11A D G S ABSOLUTE MAXIMUN RATINGS(TA=.
.