P121 Datasheet and Specifications PDF

The P121 is a PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR.

Key Specifications

Mount TypeFree Hanging
Length20.57 mm
Width9.398 mm
Part NumberP121 Datasheet
ManufacturerPolyfet RF Devices
Overview Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an. low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE.
Part NumberP121 Datasheet
DescriptionPASSIVATED ASSEMBLED CIRCUIT ELEMENTS
ManufacturerInternational Rectifier
Overview The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified givi. Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 25A Description The P100 series of Integrated Power .

Price & Availability

Seller Inventory Price Breaks Buy
Heilind Asia 0 500+ : 0.1746 USD View Offer
Interstate Connecting Components 0 1+ : 0.4484 USD
500+ : 0.3905 USD
1100+ : 0.3725 USD
2100+ : 0.3614 USD
View Offer
Heilind Americas 0 1+ : 0.4484 USD
500+ : 0.3905 USD
1100+ : 0.3725 USD
2100+ : 0.3614 USD
View Offer