The P121 is a PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR.
| Mount Type | Free Hanging |
|---|---|
| Length | 20.57 mm |
| Width | 9.398 mm |
| Part Number | P121 Datasheet |
|---|---|
| Manufacturer | Polyfet RF Devices |
| Overview | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an. low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE. |
| Part Number | P121 Datasheet |
|---|---|
| Description | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| Manufacturer | International Rectifier |
| Overview | The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified givi. Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 25A Description The P100 series of Integrated Power . |
| Seller | Inventory | Price Breaks | Buy |
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| Heilind Asia | 0 | 500+ : 0.1746 USD | View Offer |
| Interstate Connecting Components | 0 | 1+ : 0.4484 USD 500+ : 0.3905 USD 1100+ : 0.3725 USD 2100+ : 0.3614 USD |
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| Heilind Americas | 0 | 1+ : 0.4484 USD 500+ : 0.3905 USD 1100+ : 0.3725 USD 2100+ : 0.3614 USD |
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