P20N06 Datasheet
P20N06 Datasheet (CET)
CET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and curr.
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP20N06/CEB20N06 D D G G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2.
P20N06 Datasheet (Freescale Semiconductor)
Freescale Semiconductor
Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typ.
A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C T H E RMA L RE SIST A NC E RA T ING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim um U nits 62.5 0.5 o o RθJA RθJC C/W C/W Notes.