P6SMB16 Datasheet
P6SMB16 Datasheet (Taiwan Semiconductor)
Taiwan Semiconductor
P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated.
FEATURES
* Low profile package
* Ideal for automated placement
* Glass passivated junction
* Built-in strain relief
* Excellent clamping capability
* Typical IR less than 1μA above 10V
* Fast response time: Typically less than
1.0ps from 0 volt to BV min
* Compliant to RoHS Directive 2011/65/EU and
.
P6SMB16 Datasheet (JGD)
JGD
Features P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-in strain relief * Glass passivated junction * Exc.
P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-in strain relief * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical I.
P6SMB16 Datasheet (PanJit Semiconductor)
PanJit Semiconductor
P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600Watts BREAK DOWN VOLTAGE 6.8 to 400 Volt FEATURES • For surface mounted applications in order to optimize board space. • Glass pass.
* For surface mounted applications in order to optimize board space.
* Glass passivated junction
* Low inductance
* Plastic package has Underwriters Laboratory
Fammability Classification 94V-O
* High temperature soldering : 260°C /10 seconds at terminals
* Lead free in compliance with EU RoHS 2011/6.
P6SMB16 Datasheet (MIC)
MIC
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS P6SMB6.8 - P6SMB440CA FEATURES ▪ Working peak reverse voltage range – 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping c.
▪ Working peak reverse voltage range
* 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direction.
Less than 5 ns for Bi-direction, from 0 Volts to BV min ▪ Typical IR .