PD616BA Datasheet and Specifications PDF

PD616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITI.

.

NIKO-SEM N-Channel Enhancement Mode PD616BA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ ID 55A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25.

MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VG.