PHP28NQ15T Datasheet and Specifications PDF

The PHP28NQ15T is a N-Channel MOSFET Transistor.

Key Specifications

PackageSOT
Pins3
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberPHP28NQ15T Datasheet
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=25A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=18A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 120V; VGS= 0 PHP18NQ11T MIN TYPE MAX UNIT .
Part NumberPHP28NQ15T Datasheet
DescriptionN-Channel FET
ManufacturerNXP Semiconductors
Overview Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low body diode Qr s Fast switching 1.3 Applications s DC-to-DC. s Low body diode Qr s Fast switching 1.3 Applications s DC-to-DC converters s DC-to-AC inverters s Switched-mode power supplies s Class-D audio 1.4 Quick reference data s VDS ≤ 150 V s RDSon ≤ 65 mΩ s ID ≤ 28.5 A s QGD = 7.5 nC (typ) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Descriptio.
Part NumberPHP28NQ15T Datasheet
DescriptionN-channel MOSFET
ManufacturerNexperia
Overview Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co. and benefits
* Increased efficiency during switching due to low body diode recovered charge
* Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
* Class-D audio amplifiers
* DC-to-AC inverters
* DC-to-DC convertors
* Switched-mode power supplies 1.4 Q.

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