| Part Number | PHP30NQ15T |
|---|---|
| Manufacturer | Nexperia |
| Overview |
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co.
and benefits
* Low conduction losses due to low on-state resistance * Suitable for high frequency applications due to fast switching characteristics 1.3 Applications * DC-to-DC convertors * Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditi. |
PHP30NQ15T Datasheet
The PHP30NQ15T is a N-channel MOSFET.
| Part Number | PHP30NQ15T |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | NXP Semiconductors |
| Overview |
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and.
* ’Trench’ technology * Very low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 29 A g RDS(ON) ≤ 63 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Th. |
| Part Number | PHP30NQ15T |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
PHP30NQ15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 63mΩ ·Low thermal resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic.
*Static drain-source on-resistance: RDS(on) ≤ 63mΩ *Low thermal resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATION *DC/DC Converter *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RA. |