| Part Number | PHP60 Datasheet |
|---|---|
| Manufacturer | SEMTECH |
| Overview |
The PIP & PHP series of transient voltage suppression modules are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, power interrupt, inductive loa.
* * * * * * * * 7500 & 15000 watts Peak Pulse Power (tp = 10 x 1000µs) PIP series designed for industrial applications. PHP series designed for aerospace applications. Bidirectional Custom voltages available from factory. MECHANICAL CHARACTERISTICS: Molded Case Readily solderable terminals Marki. |
PHP60 Datasheet and Specifications PDF
The PHP60 is a 7/500 & 15/000 Watt TVS Module.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -65 °C |
| Part Number | PHP60N06T Datasheet |
|---|---|
| Description | TrenchMOS transistor Standard level FET |
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes . very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP60N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total po. |
| Part Number | PHP60N06LT Datasheet |
|---|---|
| Description | TrenchMOS transistor Logic level FET |
| Manufacturer | NXP Semiconductors |
| Overview |
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc .
* ’Trench’ technology * Very low on-state resistance * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance PHP60N06LT, PHB60N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 58 A g s RDS(ON) ≤ 20 mΩ (VGS = 5 V) RDS(ON) ≤ 18 mΩ (VGS = 1. |