PHX4N50E Datasheet and Specifications PDF

N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling p.

ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚.

PHX4N50E-VB PHX4N50E-VB Datasheet /$IBOOFM
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%4 Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10.

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC.