PMD1602K Datasheet
PMD1602K Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Complement to type PMD1702K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1602K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 80 V VCE(sat) Collector-Emitter Sa.
PMD1602K Datasheet (Central Semiconductor)
Central Semiconductor
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