PMD1603K Datasheet
PMD1603K Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min) ·Complement to type PMD1703K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching application.
ansistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1603K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 100 V VCE(sat) Collector-Emitt.
PMD1603K Datasheet (Central Semiconductor)
Central Semiconductor
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