PMDT670UPE Datasheet and Specifications PDF

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and .

and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source .

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and bene.

and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditio.