PMR370XN Datasheet and Specifications PDF

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT2.

s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.53 W s ID ≤ 0.84 A s RDSon ≤ 440 mΩ. 2. Pinning information T.

PMR370XN-VB PMR370XN-VB Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP.) 1.4 n.

* Trench power MOSFET
* 100 % Rg tested APPLICATIONS
* Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch S2 Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain.