PMV250EPEA Datasheet
PMV250EPEA Datasheet (NXP Semiconductors)
NXP Semiconductors
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-leve.
and benefits
* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* 1 kV ESD protected
* AEC-Q101 qualified
3. Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Para.
PMV250EPEA Datasheet (Nexperia)
Nexperia
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-leve.
and benefits
* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* 1 kV ESD protected
* AEC-Q101 qualified
3. Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Para.