PMXB40UNE Datasheet and Specifications PDF

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
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* Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 34 mΩ Very low threshold voltage.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1 kV
* Very low Drain-Source on-state resistance RDSon = 34 mΩ
* Very low threshold voltage.