The PMXB56EN is a N-channel Trench MOSFET.
| Package | SOT |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Nexperia
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* Very low Drain-Source on-state resistance RDSon = 49 mΩ
* Very fast switching
3. Applications
* Low-side load switch and charging s.
NXP Semiconductors
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* Very low Drain-Source on-state resistance RDSon = 49 mΩ
* Very fast switching
3. Applications
* Low-side load switch and charging s.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 0 | 1+ : 0.47 USD 10+ : 0.287 USD 100+ : 0.1814 USD 500+ : 0.1358 USD |
View Offer |
| DigiKey | 0 | 1+ : 0.47 USD 10+ : 0.287 USD 100+ : 0.1814 USD 500+ : 0.1358 USD |
View Offer |
| DigiKey | 0 | 5000+ : 0.09515 USD 10000+ : 0.08681 USD 15000+ : 0.08257 USD 25000+ : 0.07779 USD |
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