PMZ1200UPE Datasheet
PMZ1200UPE Datasheet (NXP Semiconductors)
NXP Semiconductors
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4..
PMZ1200UPE Datasheet (Nexperia)
Nexperia
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4..