PMZ600UNE Datasheet and Specifications PDF

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene.

and benefits
* Trench MOSFET technology
* Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-source on-state resistance RDSon = 470 mΩ 3. Applications
* Relay driver
* High-speed line driver
* Low-side load switch
* Switching .

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene.

and benefits
*
*
*
* Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications
*
*
*
* Relay driver High-speed line driver Low-side load switch Switching .