PMZB1200UPE Datasheet
PMZB1200UPE Datasheet (NXP Semiconductors)
NXP Semiconductors
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package profile of 0.37 mm height
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4. Quick re.
PMZB1200UPE Datasheet (Nexperia)
Nexperia
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package profile of 0.37 mm height
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4. Quick re.