The PMZB200UNE is a N-channel MOSFET.
| Mount Type | Surface Mount |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Nexperia
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM
* Ultra thin package profile of 0.37 mm
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference d.
NXP Semiconductors
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM
* Ultra thin package profile of 0.37 mm
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference d.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 134000 | 2565+ : 0.1463 USD 10000+ : 0.1304 USD 100000+ : 0.1093 USD |
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| Verical | 5000 | 2565+ : 0.1463 USD 10000+ : 0.1304 USD 100000+ : 0.1093 USD |
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| Rochester Electronics | 134000 | 100+ : 0.141 USD 500+ : 0.1269 USD 1000+ : 0.117 USD 10000+ : 0.1043 USD |
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